VCSEL Laser Diodes

VCSEL Laser Diodes

● Narrow spectrum width

● Low wavelength-temperature shift

● High max operation temperature

● Long time time at QCW pulsinig mode

● High threshold under harsh environment

Specifications

Chips Parameter
VCSELLD BarVCSEL Advantage
Spectral Width~1nm
~3nmNarrow Bandwidth
WaveLength Shift0.06nm/K
0.3nm/KInsensitive to Temperature
Optical LimitNo COD
Terrible COD
Damage Threshold is High
Thermal StressLow
Very highSuitable for Pulse Operation
Maximum Operating＞85 Deg.C35~45 Deg.CSuitable for High Temperature
QCW Lifetime＞20G shots1~2G shots10 Times Than Laser Bar


Array Parameter
SLD-808A-2x1SLD-808A-3x1SLD-808A-Nx1
Descirption808nm 2 VCSEL Array808nm 3 VCSEL Array808nm N VCSEL Array
Power@250us 10Hz400W600WN*200W
Power@250us 100Hz300W450WN*150W


VCSEL Pumped Module
Parameter
Pumping Power1-27KW
Store Energy60-400mJ
Repetition Frequency1-1000Hz
Pulse Width200-500us
Rod Diameter2-15mm
Central Wavelength806±3nm
Beam ProfileFlat top/Gauss optional

Applications

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